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AddOn A1545367-AA 2GB DDR2-800MHz SODIMM - Unbuffered Dual Rank CL6 1.8V 200-pin Notebook Memory Module

SKU: A1545367-AA
UPC: 821455323175
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MSRP: $417.42
$417.95
$249.95
Save: $167.47 (40.07%)
Warranty Information: Lifetime
Condition: New
Width: 5.08 (cm)
Height: 1.23 (cm)
Depth: 1.23 (cm)
Availability: Canada: Moderate Availability
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Product Features

Description

Product Overview

The AddOn A1545367-AA is a 2GB DDR2-800MHz SODIMM memory module engineered for notebook systems requiring reliable performance upgrades. This module delivers 800 MHz speed with CL6 latency, providing responsive multitasking for everyday computing tasks and applications.

Built with unbuffered dual-rank architecture and operating at 1.8V, this memory maintains stable operation while minimizing power consumption. The 200-pin SODIMM form factor ensures proper fit in compatible notebook memory slots, making it a straightforward replacement or expansion solution.

Relevant factors for this section include Memory Size, Memory Technology, Memory Voltage, Number of Pins. When those points are considered together, they give buyers a clearer picture of how the product is equipped, how it fits into deployment, and what kind of day-to-day role it is meant to support.

Capacity
DDR2 SDRAM
Installed Memory
DDR2 SDRAM800 MHz
Memory Configuration
Memory Size2 GB
Number of Modules1 x 2GB
Memory RankDual-rank
Performance Specifications
Memory TechnologyDDR2 SDRAM
Memory Speed800 MHz
Memory StandardDDR2-800/PC2-6400
Technical Details
CAS LatencyCL6
Memory Voltage1.80 V
Error CheckingNon-ECC
Physical Characteristics
Form FactorSODIMM
Number of Pins200-pin
Signal ProcessingUnbuffered

Technical Overview

This memory module utilizes DDR2 SDRAM technology with a 800 MHz clock speed, corresponding to the DDR2-800/PC2-6400 standard. The dual-rank design allows for efficient data access across memory banks, while the unbuffered signal processing reduces latency for quicker response times.

Operating at 1.8V, the module maintains power efficiency suitable for mobile systems. The CL6 CAS latency timing ensures data retrieval occurs with minimal delay, complementing the 800 MHz speed for balanced performance in memory-intensive operations.

Relevant factors for this section include Memory Size, Memory Technology, Memory Voltage, Number of Pins. When those points are considered together, they give buyers a clearer picture of how the product is equipped, how it fits into deployment, and what kind of day-to-day role it is meant to support.

A strong technical summary explains how the product's interfaces, hardware profile, and operating characteristics work together in real deployment. Buyers often need this context to confirm compatibility with existing devices, expected performance in daily use, and whether installation will be straightforward for IT staff or end users.

Memory Speed800 MHz
CAS LatencyCL6
Operating Voltage1.8V
DDR2 TechnologyDual-rank ArchitectureUnbuffered Design

Key Product Advantages

This SODIMM module combines essential performance characteristics with notebook-specific design for reliable memory upgrades. The 800 MHz speed with CL6 latency provides a noticeable improvement in application responsiveness and multitasking capability compared to slower memory configurations.

Notebook-Optimized Design

The 200-pin SODIMM form factor is specifically engineered for notebook systems, ensuring physical compatibility with standard memory slots while maintaining a compact footprint that fits within mobile device constraints.

  • 200-pin interface for notebook compatibility
  • SODIMM form factor saves space
  • Direct replacement for OEM modules

Efficient Performance Architecture

Dual-rank unbuffered design balances memory access efficiency with lower latency, while the 1.8V operation helps maintain system power efficiency—important considerations for battery-powered notebook environments.

  • Dual-rank improves memory bank utilization
  • Unbuffered reduces access latency
  • 1.8V operation for power efficiency

Deployment / Use Cases

This memory module serves as a practical upgrade solution for notebook systems requiring additional RAM capacity or replacement of existing modules. The 2GB capacity supports everyday computing tasks including web browsing, office applications, and light multimedia usage.

Ideal for notebook memory upgrades where compatibility with DDR2-800 specifications is required, this module can help extend the useful life of older systems or improve performance in systems with insufficient memory. The unbuffered non-ECC design makes it suitable for consumer and business notebooks that don't require error-correcting memory functionality.

Notebook Memory Expansion

Add memory capacity to compatible notebook systems to improve multitasking performance and application responsiveness, particularly useful for systems running multiple applications simultaneously.

  • Upgrade existing notebook memory
  • Replace failed memory modules
  • Increase system responsiveness

System Performance Enhancement

The 800 MHz speed with CL6 latency provides a measurable performance improvement over slower DDR2 modules, benefiting applications that benefit from faster memory access times.

  • Improve application loading times
  • Enhance multitasking capability
  • Support memory-intensive tasks

Physical Profile

The module features a standard SODIMM form factor measuring 2 inches (50.80 mm) in width and weighing approximately 8 ounces (226.80 g). This compact design ensures compatibility with notebook memory slots while maintaining the durability needed for mobile computing environments.

The physical profile is practical for deployment planning because the dimensions and weight are clearly defined: 2" (50.80 mm), 8 oz (226.80 g). This helps confirm rack, shelf, desk, or cabinet fit before installation.

Dimensions
Width
2" (50.80 mm)
Weight
8 oz (226.80 g)
Width2" (50.80 mm)
Weight8 oz (226.80 g)
[custom-highlights]

Highlights

  • 2GB DDR2-800MHz memory speed for responsive notebook performance
  • SODIMM form factor with 200-pin interface for notebook compatibility
  • Unbuffered dual-rank architecture for efficient memory access
  • CL6 CAS latency timing for reduced data retrieval delays
  • 1.8V operating voltage for power-efficient operation
  • Non-ECC design suitable for standard notebook applications
  • DDR2-800/PC2-6400 memory standard compliance
  • Lifetime limited warranty for long-term reliability assurance
[/custom-highlights][custom-specifications]

Specifications

Specifications
ManufacturerAddOn
Manufacturer Part NumberA1545367-AA
Brand NameAddOn
Product Name2GB DDR2 SDRAM Memory Module
Packaged Quantity1
Product TypeRAM Module
Technical Information
Memory Size2 GB
Memory TechnologyDDR2 SDRAM
Memory Voltage1.80 V
Number of Modules1 x 2GB
Memory Speed800 MHz
Memory StandardDDR2-800/PC2-6400
Memory RankDual-rank
Error CheckingNon-ECC
Signal ProcessingUnbuffered
CAS LatencyCL6
Device SupportedNotebook
Physical Characteristics
Number of Pins200-pin
Form FactorSODIMM
Width2" (50.80 mm)
Weight (Approximate)8 oz (226.80 g)
Miscellaneous
Country of OriginChina
TAA CompliantNo
Warranty
Limited WarrantyLifetime
[/custom-specifications][custom-faq]

FAQ

What is the memory capacity and technology of this module?

This module provides 2GB of memory capacity using DDR2 SDRAM technology. The DDR2 architecture operates at 800 MHz speed with a DDR2-800/PC2-6400 memory standard, offering improved bandwidth over previous DDR generations while maintaining compatibility with systems designed for DDR2 memory.

Is this memory module compatible with my notebook?

This module is designed for notebook systems that support DDR2-800 memory with a 200-pin SODIMM interface. Compatibility depends on your notebook's specific memory requirements including DDR generation, speed, voltage, and form factor. Check your system specifications or manufacturer documentation to verify compatibility before purchase.

What does dual-rank unbuffered mean for this memory?

Dual-rank architecture means the memory module has two independent sets of memory banks that can be accessed separately, potentially improving memory efficiency in certain operations. Unbuffered design means the memory controller communicates directly with memory chips without intermediate buffers, resulting in lower latency compared to registered/buffered modules typically used in servers.

What is the significance of CL6 latency timing?

CL6 refers to Column Address Strobe latency of 6 clock cycles, which measures how quickly the memory can access data after receiving a request. Lower CAS latency numbers generally indicate faster response times. The CL6 timing combined with 800 MHz speed provides balanced performance for notebook applications where both bandwidth and responsiveness matter.

Does this memory support ECC error correction?

No, this is a non-ECC memory module. It does not include error-correcting code functionality that detects and corrects single-bit memory errors. Non-ECC memory is standard for most consumer and business notebook systems, while ECC memory is typically reserved for servers and workstations where data integrity is critical.

What is the operating voltage and why does it matter?

This module operates at 1.8V, which is the standard voltage for DDR2 memory. The 1.8V operation represents a reduction from the 2.5V used by DDR memory, resulting in lower power consumption and reduced heat generation—both important considerations for notebook systems where battery life and thermal management are priorities.

[/custom-faq]
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AddOn A1545367-AA 2GB DDR2-800MHz SODIMM - Unbuffered Dual Rank CL6 1.8V 200-pin Notebook Memory Module
MSRP: $417.42
$417.95
$249.95
Save: $167.47 (40.07%)
Available & Ready to Ship